 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Transistors EMH3 / UMH3N / IMH3A General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. External dimensions (Units : mm) EMH3 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Structure Epitaxial planar type NPN silicon transistor Abbreviated symbol : H3 ROHM : EMT6 UMH3N (4) 0.65 1.3 0.65 0.7 0.8 1.1 (3) 0.5 0.5 0.5 1.0 1.6 0.95 0.95 1.9 2.9 0.2 (6) 1.25 2.1 Equivalent circuit EMH3 / UMH3N (3) (2) R1 (1) 0.15 (1) The following characteristics apply to both DTr1 and DTr2. 0.1Min. IMH3A (4) (5) R1 (6) 0to0.1 Each lead has same dimensions DTr1 DTr2 R1 (5) DTr2 R1 (2) DTr1 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : H3 IMH3A (1) (6) (4) (6) (3) (4) (5) 1.6 2.8 Packaging specifications Package Code Type EMH3 UMH3N IMH3A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - - 0.15 0.3to0.6 0to0.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H3 For the very latest product data and news visit angliac.com (3) (2) R1=4.7k R1=4.7k 0.3 (1) 0.9 2.0 (5) (2) Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Transistors Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMH3,UMH3N IMH3A Tj Tstg Symbol VCBO VCEO VEBO IC Pc Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 -55~+150 C C Unit V V V mA mW EMH3 / UMH3N / IMH3A 1 2 Junction temperature Storage temperature 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1 Min. 50 50 5 - - - 100 - 3.29 Typ. - - - - - - 250 250 4.7 Max. - - - 0.5 0.5 0.3 600 - 6.11 Unit V V V A A V - MHz k IC=50A IC=1mA IE=50A VCB=50V VEB=4V Conditions IC/IB=5mA/0.25mA VCE=5V, IC=1mA VCE=10mA, IE=-5mA, f=100MHz - Transition frequency of the device Electrical characteristic curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k 500 VCE=5V 1 500m 200m 100m 50m 20m 10m 5m 2m 1m lC/lB=20 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m Ta=100C 25C -40C Ta=100C 25C -40C 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current For the very latest product data and news visit angliac.com |
Price & Availability of UMH3N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |